sot223 pnp silicon planar medium power high gain transistor issue 3 ? october 1995 features * extremely low equivalent on-resistance; r ce(sat) 93m w at 3a * gain of 200 at i c =2 amps and very low saturation voltage applications * battery powered circuits, fast charge converters complementary type - fzt689b partmarking detail - FZT789A absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -25 -40 v i c =-100 m a v (br)ceo -25 -35 v i c =-10ma* v (br)ebo -5 -8.5 v i e =-100 m a collector cut-off current i cbo -0.1 10 m a m a v cb =-15v v cb =-15v, t amb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v saturation voltages v ce(sat) -0.15 -0.30 -0.30 -0.25 -0.45 -0.50 v v v i c =-1a, i b =-10ma* i c =-2a, i b =-20ma* i c =-3a, i b =-100ma* v be(sat) -0.8 -1.0 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.8 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 100 800 i c =-10ma, v ce =-2v i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v, f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on t off 35 400 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT789A FZT789A c c e b 3 - 246 3 - 247 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v o lts) v ce(sat) v i c i c - collector current (amps) v - (v o lts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - no r m a lised ga in v - (v o l ts) 750 500 250 h - t ypica l g a in t amb =25c -55c +25c +100c +175c 0 0 v ce =2v 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v - (v o lts) -55c +25c +100c +175c i c /i b =100 i c /i b =10 i c /i b =100 i c /i b =40 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =100 -55c +25c +100c v ce =2v 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 +100c +25c -55c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10
sot223 pnp silicon planar medium power high gain transistor issue 3 ? october 1995 features * extremely low equivalent on-resistance; r ce(sat) 93m w at 3a * gain of 200 at i c =2 amps and very low saturation voltage applications * battery powered circuits, fast charge converters complementary type - fzt689b partmarking detail - FZT789A absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -25 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v peak pulse current i cm -6 a continuous collector current i c -3 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. breakdown voltages v (br)cbo -25 -40 v i c =-100 m a v (br)ceo -25 -35 v i c =-10ma* v (br)ebo -5 -8.5 v i e =-100 m a collector cut-off current i cbo -0.1 10 m a m a v cb =-15v v cb =-15v, t amb =100c emitter cut-off current i ebo -0.1 m a v eb =-4v saturation voltages v ce(sat) -0.15 -0.30 -0.30 -0.25 -0.45 -0.50 v v v i c =-1a, i b =-10ma* i c =-2a, i b =-20ma* i c =-3a, i b =-100ma* v be(sat) -0.8 -1.0 v i c =-1a, i b =-10ma* base-emitter turn-on voltage v be(on) -0.8 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 300 250 200 100 800 i c =-10ma, v ce =-2v i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* i c =-6a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v, f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 25 pf v cb =-10v, f=1mhz switching times t on t off 35 400 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FZT789A FZT789A c c e b 3 - 246 3 - 247 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (v o lts) v ce(sat) v i c i c - collector current (amps) v - (v o lts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - no r m a lised ga in v - (v o l ts) 750 500 250 h - t ypica l g a in t amb =25c -55c +25c +100c +175c 0 0 v ce =2v 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v - (v o lts) -55c +25c +100c +175c i c /i b =100 i c /i b =10 i c /i b =100 i c /i b =40 1.8 1.4 1.2 1.0 0.4 0.2 i c /i b =100 -55c +25c +100c v ce =2v 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 +100c +25c -55c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10 100 1s dc 100ms 10ms 100 m s 1ms 1 0.01 0.1 10
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